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This letter reports the observation of threshold switching and memory behaviors of epitaxially regrown GaN-on-GaN vertical p-n diodes. This mechanism was ascribed to the conductive path formed by traps in the insulating layer at the regrowth interface after soft breakdown. The device can reliably switch more than 1000 cycles at both room temperature and 300°C with small fluctuation on the set and reset voltage. The set voltage increased with the increasing temperature due to the enhanced thermal detrapping effect that made it harder to form conductive path at high temperatures. Besides, the device showed memory behaviors when the reset voltage was higher than 4.4 V. This letter can serve as an important reference to further developing GaN-based memory devices and integrated circuits.

ieee electron device letters

Threshold Switching and Memory Behaviors of Epitaxially Regrown GaN-on-GaN Vertical &lt;italic&gt;p&lt;/italic&gt;-&lt;italic&gt;n&lt;/italic&gt; Diodes With High Temperature Stability