Open AccessTrapping Effects in Si $\delta$ -Doped $\beta$ -Ga2O3 MESFETs on an Fe-Doped $\beta$ -Ga2O3 Substrate
Author(s) -
Joe F. Mcglone,
Zhanbo Xia,
Yuewei Zhang,
Chandan Joishi,
Saurabh Lodha,
Siddharth Rajan,
Steven A. Ringel,
Aaron R. Arehart
Publication year - 2018
Publication title -
ieee electron device letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.337
H-Index - 154
eISSN - 1558-0563
pISSN - 0741-3106
DOI - 10.1109/led.2018.2843344
Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems
Threshold voltage instability was observed on β-Ga2O3 transistors using double-pulsed current-voltage and constant drain current deep level transient spectroscopy (DLTS) measurements. A total instability of 0.78 V was attributed to two distinct trap levels, at EC-0.70 and EC-0.77 eV, which need to be mitigated for future applications. The traps are likely located near the gate-drain edge and below the delta-doped layer, which is determined through the DLTS technique and an understanding of the fill and empty biasing conditions. The trap modulation was consistent with a gate leakage-based trap filling mechanism, which was demonstrated. It is likely that Fe is playing a role in the observed dispersion due to the close proximity of the Fe substrate.