High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology | Zendy

Nebojsa Jankovic | Zendy; Olga Kryvchenkova | Zendy; Steve Batcup | Zendy; Petar Igic | Zendy

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High Sensitivity Dual-Gate Four-Terminal Magnetic Sensor Compatible With SOI FinFET Technology

Author(s) -

Nebojsa Jankovic,

Olga Kryvchenkova,

Steve Batcup,

Petar Igic

Publication year - 2017

Publication title -

ieee electron device letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.337

H-Index - 154

eISSN - 1558-0563

pISSN - 0741-3106

DOI - 10.1109/led.2017.2693559

Subject(s) - engineered materials, dielectrics and plasmas , components, circuits, devices and systems

This letter presents a novel device concept of split-current magnetic sensor that is fully compatible with silicon-on-insulator(SOI) FinFETtechnology.The fabricated dual-gate four-terminal device brings a step change in SOI integrated sensor capabilities, and its measured currentrelated relative sensitivity is as high as 3400% T-1 at 2 μA of total supply current. The device's very high sensitivity is attributed to its novel current conduction phenomena and the internal magnetic deflection enhancement loop demonstrated using 3-D TCAD numerical simulations. This new magnetic sensor is a very promising candidate for the next generation of magnetic sensitive smart-power integrated circuits.

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