Open AccessFerroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)
Author(s) -
Kuan-Ting Chen,
Siang-Sheng Gu,
Zheng-Ying Wang,
Chun-Yu Liao,
Yu-Chen Chou,
Ruo-Chun Hong,
Shih-Yao Chen,
Hong-Yu Chen,
Gao-Yu Siang,
Chieh Lo,
Pin-Guang Chen,
M.-H. Liao,
Kai-Shin Li,
Shu-Tong Chang,
Min-Hung Lee
Publication year - 2018
Publication title -
ieee journal of the electron devices society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.69
H-Index - 31
ISSN - 2168-6734
DOI - 10.1109/jeds.2018.2863283
Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (<;60 mV/dec) is extended from ~2.5 (bulk-Si) decades to ~3.5 decades SOI. Reverse-drain-induced barrier lowering and negative differential resistance are confirmed at subthreshold region and weak inversion region, respectively.
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