Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations | Zendy

Shu-Hua Wu | Zendy; Chien-Lin Yu | Zendy; Chang-Hung Yu | Zendy; Pin Su | Zendy

Open Access

Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations

Author(s) -

Shu-Hua Wu,

Chien-Lin Yu,

Chang-Hung Yu,

Pin Su

Publication year - 2016

Publication title -

ieee journal of the electron devices society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.69

H-Index - 31

ISSN - 2168-6734

DOI - 10.1109/jeds.2016.2628967

Subject(s) - components, circuits, devices and systems , engineered materials, dielectrics and plasmas

This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when studying short-channel effects in III-V FETs, one has to account for quantum-confinement, or else predictions will be pessimistic. Due to 2-D quantum-confinement, the DIBL of the InGaAs tri-gate devices can be significantly suppressed and be comparable to the Si counterpart. Besides, for highly-scaled InGaAs tri-gate NFETs, the impact of buried-oxide thickness on DIBL becomes minor, and the DIBL sensitivity to the fin-width and gate-length variations can also be suppressed by the quantum-confinement effect. This paper may provide insights for tri-gate device design using III-V high-mobility channel materials.

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