How long can we succeed using the OBIRCH and its derivatives ?

The OBIRCH (optical beam induced resistance change) method is an indispensable failure analysis tool in the semiconductor industry. It is useful not only for test structures but also for final products. It is useful for field failures and the failures in manufacturing processes at development phase and mass-production phase. The principle of the OBIRCH is very simple, heating and detecting resistance-change, but it has many features. The OBIRCH can detect the voids in Al lines [Nikawa (1993, 1994, 1995a)] and Cu lines [Tagami (2002)], the voids under Al vias [Nikawa (1995b)], W vias [Yokogawa (2001)] and Cu vias [Yokogawa (2002)] , Si nodules [Nikawa (1995b)], and high-resistive area [Nikawa (1997a)]. It can also detect current paths in metal test structures [Nikawa (1993, 1995b)] and in product ICs [Nikawa (1996)].