Open AccessStrained Pt Schottky Diodes on n-type Si and Ge
Author(s) -
M.H. Liao,
S.T. Chang,
P.S. Kuo,
H.-T. Wu,
C.-Y. Peng,
C.W. Liu
Publication year - 2006
Publication title -
international sige technology and device meeting
Language(s) - English
Resource type - Conference proceedings
DOI - 10.1109/istdm.2006.1715946
Subject(s) - schottky diode , materials science , schottky barrier , perpendicular , reduction (mathematics) , semiconductor , stress (linguistics) , enhanced data rates for gsm evolution , optoelectronics , condensed matter physics , diode , strain (injury) , germanium , thermal conduction , conduction band , silicon , composite material , geometry , electron , physics , mathematics , engineering , telecommunications , medicine , linguistics , philosophy , quantum mechanics
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