Analytical Noise-Rejection Model Based on Short Channel MOSFET
Author(s) -
Vinay Jain,
Payman Zarkesh-Ha
Publication year - 2008
Publication title -
9th international symposium on quality electronic design (isqed 2008)
Language(s) - English
DOI - 10.1109/isqed.2008.166
Due to scaling down of semiconductor technology, modern deep-submicron VLSI circuits are becoming increasingly vulnerable to noise from multiple sources, including cross-talk, radiation-induced single event transient, and power supply noises.Noise Rejection Curve (NRC) has been used as a metric to model noise susceptibility of logic circuits to such sources. In this paper an analytical model for NRC, which includes short channel effects, is presented. The model uses only basic SPICE parameters and does not include any calibration parameter. Comparison with SPICE simulations using TSMC 0.25um CMOS process parameters, suggests that the proposed model can accurately predict NRC characteristic of variety of logic circuits.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom