Improvement of the dynamic characteristics of Au-free AlGaN/GaN Schottky Diodes on 200 mm Si wafers by surface treatments

In this work we show the impact of surface cleaning on the dynamic characteristics of Au-free AlGaN/GaN Gated Edge Termination Schottky Barrier Diodes (GET-SBDs). It is demonstrated that the current dispersion (measured in pulsed regime) can be reduced by introducing a N 2 plasma cleaning step in the anode metal deposition chamber. Moreover, diodes treated with N 2 plasma show lower current drop after reverse voltage stress (with a relative forward voltage increase of 2% after stress) than diodes without clean or with Atomic Layer Etching (ALE) clean (20% and 37% relative forward voltage increase, respectively).