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7-decades tunable translinear SiGe BiCMOS 3-phase sinusoidal oscillator
Author(s) -
Dimitrios N. Loizos,
Paul P. Sotiriadis,
Gert Cauwenberghs
Publication year - 2008
Publication title -
2008 ieee international symposium on circuits and systems (iscas)
Language(s) - English
Resource type - Conference proceedings
eISSN - 2158-1525
pISSN - 0271-4302
DOI - 10.1109/iscas.2008.4542052
Subject(s) - components, circuits, devices and systems , communication, networking and broadcast technologies , engineered materials, dielectrics and plasmas
A fully differential translinear 3-phase sinusoidal oscillator architecture is presented. The architecture is meant for BiCMOS implementation and uses only NPN devices, typically of higher performance than their PNP counterparts in most technologies. The architecture features both frequency and amplitude control and expressions are derived showing the dependence of these controls to external current biases. Measurements on a 0.5μm SiGe BiCMOS implementation of the architecture demonstrate frequency control from below 80Hz to above 800MHz, general agreement between theory and actual data for the amplitude of oscillation, as well as low distortion. Power consumption scales with the frequency of operation and amounts to ∼2μW/MHz.

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