Reliability and yield: a joint defect-oriented approach
Author(s) -
Roman Barsky,
Israel A. Wagner
Publication year - 2004
Publication title -
19th ieee international symposium on defect and fault tolerance in vlsi systems, 2004. dft 2004. proceedings.
Language(s) - English
DOI - 10.1109/dft.2004.51
We present a model for computing the probability of a parametric failure due to a spot defect. The analysis is based on electromigration in conductors under unidirectional current stress. An analytical solution is given for simple layout and simulations for a more complicated case. Then we show that in some cases electromigration-dependent parametric defects can make a significant contribution to the total yield estimation.
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