English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process, the applied T-gate process shows a technique for forming a T-gate using the reactivity difference of several photoresists. The fabricated device has a steep fin width (Wfin) of 130 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 190 nm. The device exhibits a low leakage current (Ioff) of 6.6 &#x00D7; 10-10 A/mm and a high Ion/Ioff current ratio of 4.7 &#x00D7; 108. Moreover, the fabricated device achieved a high cut-off frequency (fT) of 9.7 GHz and a very high maximum oscillation frequency (fmax) of 27.8 GHz. The fmax value of the proposed device is 138% higher than that of GaN-based fin-type HEMTs without T-gate.

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance