Open AccessFabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance
Author(s) -
Min Su Cho,
Jae Hwa Seo,
Sang Ho Lee,
Hwan Soo Jang,
In Man Kang
Publication year - 2020
Publication title -
ieee access
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.587
H-Index - 127
ISSN - 2169-3536
DOI - 10.1109/access.2020.3011103
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
To increase the radio-frequency (RF) performance of AlGaN/GaN-based fin-type high electron mobility transistors (HEMTs), a novel T-gate process was developed and applied to fabricate a device with high RF performance. In a single lithography process, the applied T-gate process shows a technique for forming a T-gate using the reactivity difference of several photoresists. The fabricated device has a steep fin width (Wfin) of 130 nm, a fin height (Hfin) of 250 nm, and a gate length (LG) of 190 nm. The device exhibits a low leakage current (Ioff) of 6.6 × 10-10 A/mm and a high Ion/Ioff current ratio of 4.7 × 108. Moreover, the fabricated device achieved a high cut-off frequency (fT) of 9.7 GHz and a very high maximum oscillation frequency (fmax) of 27.8 GHz. The fmax value of the proposed device is 138% higher than that of GaN-based fin-type HEMTs without T-gate.
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