z-logo
open-access-imgOpen Access
Topological Properties of 2-Dimensional Silicon-Carbons
Author(s) -
Shin Min Kang,
Muhammad Kamran Siddiqui,
Najma Abdul Rehman,
Muhammad Naeem,
Mehwish Hussain Muhammad
Publication year - 2018
Publication title -
ieee access
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.587
H-Index - 127
ISSN - 2169-3536
DOI - 10.1109/access.2018.2874461
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
There are immense applications of graph theory in chemistry and in the study of molecular structures, and after that, it has been increasing exponentially. Molecular graphs have points (vertices) representing atoms and lines (edges) that represent bonds between atoms. In this paper, we study the molecular graph of 2- $D$ silicon–carbon Si2C3- $I$ and Si2C3- $II$ and analyzed its topological properties. For this purpose, we have computed topological indices, namely forgotten topological index, augmented Zagreb index, and Balaban index, and redefined first, second, and third Zagreb indices of 2- $D$ silicon–carbon Si2C3- $I$ and Si2C3- $II$ .

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom