Similarity-Based Difference Analysis Approach for Remaining Useful Life Prediction of GaAs-Based Semiconductor Lasers | Zendy

Zhen Liu | Zendy; Qing Wang | Zendy; Chenliang Song | Zendy; Yuhua Cheng | Zendy

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Similarity-Based Difference Analysis Approach for Remaining Useful Life Prediction of GaAs-Based Semiconductor Lasers

Author(s) -

Zhen Liu,

Qing Wang,

Chenliang Song,

Yuhua Cheng

Publication year - 2017

Publication title -

ieee access

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.587

H-Index - 127

ISSN - 2169-3536

DOI - 10.1109/access.2017.2759325

Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation

Recently, the analysis of remaining useful life (RUL), which is central to the reliability assessment of lasers under various environment stresses, has become one of the most crucial issues in the field of laser reliability. In this paper, a similarity-based difference analysis (SbDA) approach is proposed to estimate the RUL of GaAs-based semiconductor lasers. SbDA utilizes the inherent relation between historical samples and the on-site sample in which we calculate the inherent difference to acquire a more exact performance degradation value. This method can make adequate use of the limited historical data sets to more accurately estimate the lifetime of an operating GaAs laser. In addition, we present several significant results of studies of model parameters, such as random disturbance, weight distribution factor, and similarity. Experimental results show the effectiveness and advantages of the proposed SbDA method.

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