Open AccessRole of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures
Author(s) -
Khaled Ahmeda,
Brendan Ubochi,
Brahim Benbakhti,
Steven J. Duffy,
Ali Soltani,
Wei Dong Zhang,
Karol Kalna
Publication year - 2017
Publication title -
ieee access
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.587
H-Index - 127
ISSN - 2169-3536
DOI - 10.1109/access.2017.2755984
Subject(s) - aerospace , bioengineering , communication, networking and broadcast technologies , components, circuits, devices and systems , computing and processing , engineered materials, dielectrics and plasmas , engineering profession , fields, waves and electromagnetics , general topics for engineers , geoscience , nuclear engineering , photonics and electrooptics , power, energy and industry applications , robotics and control systems , signal processing and analysis , transportation
The interplay of self-heating and polarization affecting resistance is studied in AlGaN/GaN transmission line model (TLM) heterostructures with a scaled source-to-drain distance. This paper is based on meticulously calibrated TCAD simulations against I-V experimental data using an electro-thermal model. The electro-thermal simulations show hot-spots (with peak temperature in a range of ~566 K-373 K) at the edge of the drain contact due to a large electric field. The electrical stress on Ohmic contacts reduces the total polarization, leading to the inverse/converse piezoelectric effect. This inverse effect decreases the polarization by 7%, 10%, and 17% during a scaling of the source-to-drain distance in the 12 μm, 8 μm, and 4 μm TLM heterostructures, respectively, when compared with the largest 18-μm heterostructure.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom