z-logo
open-access-imgOpen Access
Novel fabrication technique for high‐resolution spherical crystal analyzers using a microporous aluminium base
Author(s) -
Said Ayman H.,
Kim Jung Ho,
Aran Emily K.,
Gog Thomas
Publication year - 2022
Publication title -
journal of synchrotron radiation
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.172
H-Index - 99
ISSN - 1600-5775
DOI - 10.1107/s1600577522001886
Subject(s) - crystal (programming language) , materials science , fabrication , optics , wafer , wafer dicing , substrate (aquarium) , bending , microporous material , lens (geology) , spectrum analyzer , bent molecular geometry , spectrometer , optoelectronics , physics , composite material , medicine , oceanography , alternative medicine , pathology , computer science , programming language , geology
Modern inelastic X‐ray spectrometers employ curved, bent and diced analyzers to capture sufficiently large solid angles of radially emitted scattered radiation emanating from the sample. Fabricating these intricate analyzers, especially when a high energy resolution of a few millielectronvolts is required, is very time‐consuming, expensive and often a hit‐or‐miss affair. A novel fabrication technique is introduced, utilizing a concave‐spherical, microporous aluminium base to hold an assembly of a thin glass substrate with a diced crystal wafer bonded to it. Under uniform vacuum forces, the glass substrate is drawn into the aluminium base, achieving the desired bending radius, while dicing of the diffracting crystal layer prevents bending strain from being imposed on the individual crystal pixels. This technique eliminates the need for permanently bonding the crystal assembly to the concave lens, offering the opportunity for correcting figure errors, avoiding long‐term degradation of the permanent bond, and making both lens and crystal reusable. Process and material costs are thus substantially decreased. Two analyzers, Si(844) and Ge(337) with intrinsic resolutions of 14.6 meV and 36.5 meV, respectively, were produced in this fashion and characterized in resonant inelastic X‐ray scattering (RIXS) measurements. The achieved overall energy resolutions for both analyzers were 29.4 meV for Si(844) and 56.6 meV for Ge(337). Although the RIXS technique is veru sensitive to analyzer imperfections, the analyzers were found to be equal, if not superior, in quality to their traditional, permanently bonded counterparts.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here