Open AccessPseudoepitaxial transrotational structures in 14 nm‐thick NiSi layers on [001] silicon
Author(s) -
Alberti Alessandra,
Bongiorno Corrado,
Cafra Brunella,
Mannino Giovanni,
Rimini Emanuele,
Metzger Till,
Mocuta Cristian,
Kammler Thorsten,
Feudel Thomas
Publication year - 2005
Publication title -
acta crystallographica section b
Language(s) - English
Resource type - Journals
eISSN - 1600-5740
pISSN - 0108-7681
DOI - 10.1107/s0108768105022585
Subject(s) - materials science , orthorhombic crystal system , silicide , annealing (glass) , epitaxy , crystallite , lattice (music) , silicon , condensed matter physics , scaling , layer (electronics) , crystallography , composite material , optoelectronics , crystal structure , metallurgy , geometry , chemistry , physics , mathematics , acoustics
In a system consisting of two different lattices, structural stability is ensured when an epitaxial relationship occurs between them and allows the system to retain the stress whilst avoiding the formation of a polycrystalline film. The phenomenon occurs if the film thickness does not exceed a critical value. Here we show that in spite of its orthorhombic structure, a 14 nm‐thick NiSi layer can three‐dimensionally adapt to the cubic Si lattice by forming transrotational domains. Each domain arises by the continuous bending of the NiSi lattice, maintaining a close relationship with the substrate structure. The presence of transrotational domains does not cause a roughening of the layer, but instead it improves the structural and electrical stability of the silicide in comparison with a 24 nm‐thick layer formed using the same annealing process. These results have relevant implications for the thickness scaling of NiSi layers which are currently used as metallizations of electronic devices.