Open AccessHigh‐resolution study of (002, 113, 11−1) four‐beam diffraction in Si
Author(s) -
Kohn V. G.,
Kazimirov A.
Publication year - 2012
Publication title -
acta crystallographica section a
Language(s) - English
Resource type - Journals
eISSN - 1600-5724
pISSN - 0108-7673
DOI - 10.1107/s0108767312012305
Subject(s) - optics , diffraction , collimated light , reciprocal lattice , monochromatic color , azimuth , reflection (computer programming) , beam (structure) , plane of incidence , crystal (programming language) , synchrotron radiation , physics , materials science , plane wave , laser , computer science , programming language
The results of a high‐resolution study of the (002, 113, ) four‐beam diffraction in Si are presented. The incident synchrotron radiation beam was highly monochromated and collimated with a multi‐crystal arrangement in a dispersive setup in both vertical and horizontal planes, in an attempt to experimentally approach plane‐wave incident conditions. The Renninger scheme was used with the forbidden reflection reciprocal‐lattice vector 002 normal to the crystal surface. The azimuthal and polar rotations were performed in the crystal surface plane and the vertical plane correspondingly. The polar angular curves for various azimuthal angles were measured and found to be very close to theoretical computer simulations, with only a small deviation from the plane monochromatic wave. The effect of the strong two‐beam 002 diffraction was observed for the first time with the maximum reflectivity close to 80%. The structure factor of the 002 reflection in Si was experimentally determined as zero.