z-logo
open-access-imgOpen Access
Electronic structure of αAl2O3 grain boundaries containing reactive element segregants
Author(s) -
Andy Paul Chen,
A. H. Heuer,
Michael W. Finnis,
W. M. C. Foulkes
Publication year - 2022
Publication title -
physical review materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.6.093402
Subject(s) - grain boundary , materials science , valence (chemistry) , crystallography , fermi level , condensed matter physics , electronic structure , vacancy defect , physics , electron , metallurgy , chemistry , nuclear physics , quantum mechanics , microstructure

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom