Electronic structure of α − Al 2 O 3 grain boundaries containing reactive element segregants
Author(s) -
Andy Paul Chen,
A. H. Heuer,
Michael W. Finnis,
W. M. C. Foulkes
Publication year - 2022
Publication title -
physical review materials
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.6.093402
Subject(s) - grain boundary , materials science , valence (chemistry) , crystallography , fermi level , condensed matter physics , electronic structure , vacancy defect , physics , electron , metallurgy , chemistry , nuclear physics , quantum mechanics , microstructure
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