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Influence of doping level and surface states in tunneling spectroscopy of an In0.53Ga0.47As quantum well grown on
Author(s) -
Nathali Alexandra Franchina Vergel,
Athmane Tadjine,
Vincent Notot,
Marcel Mohr,
A. Kouassi N’Guissan,
Christophe Coi,
Maxime Berthe,
Louis Biadala,
K. K. Sossoe,
Milohum Mikesokpo Dzagli,
JeanChristophe Girard,
Guillemin Rodary,
L. Desplanque,
Richard Berndt,
D. Stiévenard,
X. Wallart,
Christophe Delerue,
B. Grandidier
Publication year - 2019
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.3.094604
Subject(s) - quantum tunnelling , scanning tunneling spectroscopy , condensed matter physics , spectroscopy , materials science , surface states , density of states , conductance , relaxation (psychology) , doping , fermi level , electron , scanning tunneling microscope , physics , surface (topology) , quantum mechanics , psychology , social psychology , geometry , mathematics

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