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Chemical nature of the anion antisite in dilute phosphide GaAs1xPx alloy grown at low temperature
Author(s) -
Thomas Demonchaux,
K. K. Sossoe,
Milohum Mikesokpo Dzagli,
J. P. Nys,
Maxime Berthe,
D. Troadec,
Ahmed Addad,
M. Veillerot,
G. Patriarche,
H. J. von Bardeleben,
M. Schnedler,
Christophe Coi,
I. Lefebvre,
M. A. Mohou,
D. Stiévenard,
Jean-François Lampin,
Ph. Ebert,
X. Wallart,
B. Grandidier
Publication year - 2018
Publication title -
physical review materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.439
H-Index - 42
eISSN - 2476-0455
pISSN - 2475-9953
DOI - 10.1103/physrevmaterials.2.104601
Subject(s) - phosphide , materials science , ternary operation , scanning tunneling microscope , ion , crystallography , analytical chemistry (journal) , nanotechnology , physics , metallurgy , chemistry , metal , chromatography , quantum mechanics , computer science , programming language

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