Origin of Charge Density atLaAlO3onSrTiO3Heterointerfaces: Possibility of Intrinsic Doping | Zendy

Wolter Siemons | Zendy; Gertjan Koster | Zendy; Hideki Yamamoto | Zendy; Walter A. Harrison | Zendy; G. Lucovsky | Zendy; T. H. Geballe | Zendy; Dave H. A. Blank | Zendy; M. R. Beasley | Zendy

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Origin of Charge Density atLaAlO3onSrTiO3Heterointerfaces: Possibility of Intrinsic Doping

Author(s) -

Wolter Siemons,

Gertjan Koster,

Hideki Yamamoto,

Walter A. Harrison,

G. Lucovsky,

T. H. Geballe,

Dave H. A. Blank,

M. R. Beasley

Publication year - 2007

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.98.196802

Subject(s) - annealing (glass) , materials science , limiting , dielectric , charge carrier density , redistribution (election) , oxygen , charge (physics) , analytical chemistry (journal) , physics , doping , optoelectronics , chemistry , mechanical engineering , quantum mechanics , chromatography , politics , political science , law , engineering , composite material

As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO{sub 3} and LaAlO{sub 3}. Based on transport, spectroscopic, and oxygen-annealing experiments, we conclude that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities. Annealing experiments show a limiting carrier density. We also present a model that explains the high mobility based on carrier redistribution due to an increased dielectric constant

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