Microscopic Basis for the Mechanism of Carrier Dynamics in an Operatingp−nJunction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy | Zendy

Shoji Yoshida | Zendy; Yuya Kanitani | Zendy; Ryuji Oshima | Zendy; Yoshitaka Okada | Zendy; Osamu Takeuchi | Zendy; Hidemi Shigekawa | Zendy

Open Access

Microscopic Basis for the Mechanism of Carrier Dynamics in an Operatingp−nJunction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy

Author(s) -

Shoji Yoshida,

Yuya Kanitani,

Ryuji Oshima,

Yoshitaka Okada,

Osamu Takeuchi,

Hidemi Shigekawa

Publication year - 2007

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.98.026802

Subject(s) - spectroscopy , electric field , basis (linear algebra) , physics , diffusion , quantum tunnelling , doping , materials science , condensed matter physics , thermodynamics , geometry , quantum mechanics , mathematics

The doping characteristics and carrier transport in a GaAs p-n junction were visualized with a ~10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The dynamics of minority carriers under operating conditions, such as recombination, diffusion, and electric field induced drift, which had previously been analyzed on the basis of empirical electric properties, were successfully examined on the nanoscale. These results provide a solid basis for elucidating the mechanism of the carrier transport properties predicted by using the macroscopic analysis

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