Identification of the Carbon Antisite-Vacancy Pair in4H-SiC | Zendy

T. Umeda | Zendy; Nguyên Tiên Són | Zendy; Junichi Isoya | Zendy; Erik Janzén | Zendy; Takeshi Ohshima | Zendy; N. Morishita | Zendy; H. Itoh | Zendy; Ádám Gali | Zendy; Michel Bockstedte | Zendy

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Identification of the Carbon Antisite-Vacancy Pair in4H-SiC

Author(s) -

T. Umeda,

Nguyên Tiên Són,

Junichi Isoya,

Erik Janzén,

Takeshi Ohshima,

N. Morishita,

H. Itoh,

Ádám Gali,

Michel Bockstedte

Publication year - 2006

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.96.145501

Subject(s) - metastability , vacancy defect , center (category theory) , charge (physics) , materials science , carbon fibers , electron paramagnetic resonance , crystallography , semiconductor , physics , atomic physics , condensed matter physics , nuclear magnetic resonance , chemistry , particle physics , quantum mechanics , optoelectronics , composite number , composite material

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiV_C^-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC

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