Paired Gap States in a Semiconducting Carbon Nanotube: Deep and Shallow Levels | Zendy

Sung-Jun Lee | Zendy; Gunn Kim | Zendy; Ha Jin Kim | Zendy; ByoungYoung Choi | Zendy; Jhinhwan Lee | Zendy; Byoung Wook Jeong | Zendy; Jisoon Ihm | Zendy; Young Kuk | Zendy; SeJong Kahng | Zendy

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Paired Gap States in a Semiconducting Carbon Nanotube: Deep and Shallow Levels

Author(s) -

Sung-Jun Lee,

Gunn Kim,

Ha Jin Kim,

ByoungYoung Choi,

Jhinhwan Lee,

Byoung Wook Jeong,

Jisoon Ihm,

Young Kuk,

SeJong Kahng

Publication year - 2005

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.95.166402

Subject(s) - carbon nanotube , materials science , band gap , scanning tunneling spectroscopy , doping , condensed matter physics , vacancy defect , quantum tunnelling , scanning tunneling microscope , impurity , nanotechnology , optoelectronics , physics , quantum mechanics

Several paired, localized gap states were observed in semiconducting single-wall carbon nanotubes using spatially resolved scanning tunneling spectroscopy. A pair of gap states is found far from the band edges, forming deep levels, while the other pair is located near the band edges, forming shallow levels. With the help of a first-principles study, the former is explained by a vacancy-adatom complex while the latter is explained by a pentagon-heptagon structure. Our experimental observation indicates that the presence of the gap states provides a means to perform local band-gap engineering as well as doping without impurity substitution.open433

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