Curvature-Induced Metallization of Double-Walled Semiconducting Zigzag Carbon Nanotubes | Zendy

Susumu Okada | Zendy; Atsushi Oshiyama | Zendy

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Curvature-Induced Metallization of Double-Walled Semiconducting Zigzag Carbon Nanotubes

Author(s) -

Susumu Okada,

Atsushi Oshiyama

Publication year - 2003

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.91.216801

Subject(s) - carbon nanotube , zigzag , materials science , curvature , ballistic conduction in single walled carbon nanotubes , graphite , fermi level , electron , mechanical properties of carbon nanotubes , electronic structure , nanotube , fermi energy , condensed matter physics , nanotechnology , composite material , physics , geometry , mathematics , quantum mechanics

We report total-energy electronic-structure calculations that provide energetics and electronic structures of double-walled carbon nanotubes consisting of semiconducting (n,0) nanotubes. We find that optimum spacing between the walls of the nanotubes is slightly larger than the interlayer spacing of the graphite. We also find that the electronic structures of the double-walled nanotubes with the inner (7,0) nanotube are metallic with multicarrier characters in which electrons and holes exist on inner and outer nanotubes, respectively. Interwall spacing and curvature difference are found to be essential for the electron states around the Fermi level

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