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Electron- or Hole-Assisted Reactions of H Defects in Hydrogen-Bonded KDP
Author(s) -
C.S. Liu,
Nicholas Kioussis,
Stavros G. Demos,
Harry B. Radousky
Publication year - 2003
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.91.015505
Subject(s) - hydrogen atom , electron , hydrogen , materials science , vacancy defect , ab initio , molecule , atomic physics , chemistry , crystallography , physics , group (periodic table) , organic chemistry , quantum mechanics
We present an ab initio study of the stability and defect reactions of neutral and charged H interstitial (H(i)) and H vacancy (H(v)) in KH2PO4 (KDP). We find that while there is no interaction between the neutral H(i) and the host, the addition of an electron leads to the ejection of a H host atom and the subsequent formation of an interstitial H2 molecule and a H(v). In sharp contrast, the addition of a hole results in the formation of a hydroxyl bond. Thus, H(i) in both charged states severs the H-bonded network. For the H(v), the addition of a hole leads to the formation of a peroxyl bridge. The neutral H(i) and the positively charged H(v) induce states in the gap. The results elucidate the underlying atomic mechanism for the defect reactions suggested by experiment.

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