p(2×2)Phase of Buckled Dimers of Si(100) Observed onn-Type Substrates below 40 K by Scanning Tunneling Microscopy | Zendy

Kenji Hata | Zendy; Shoji Yoshida | Zendy; Hidemi Shigekawa | Zendy

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p(2×2)Phase of Buckled Dimers of Si(100) Observed onn-Type Substrates below 40 K by Scanning Tunneling Microscopy

Author(s) -

Kenji Hata,

Shoji Yoshida,

Hidemi Shigekawa

Publication year - 2002

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.89.286104

Subject(s) - materials science , scanning tunneling microscope , doping , dimer , quantum tunnelling , phase (matter) , surface reconstruction , analytical chemistry (journal) , crystallography , physics , surface (topology) , nanotechnology , chemistry , nuclear magnetic resonance , geometry , optoelectronics , mathematics , chromatography , quantum mechanics

We have investigated the basic surface reconstruction of Si(100) on well defined surfaces fabricated on various substrates at low temperatures (-80 K) by scanning tunneling microscopy. Below 40 K, the single p(2×2) phase, a phase never observed before, was observed exclusively on n-type substrates doped in the range of 0.002 to 0.017 Ω cm. We also exclude the possibility of the (2×1) symmetric dimer commonly observed at low temperature (-10 K) being the basic surface reconstruction by showing that a buckled dimer can be flip-flopped by the tunneling tip

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