Confinement-Enhanced Electron Transport across a Metal-Semiconductor Interface | Zendy

Igor Altfeder | Zendy; J. A. Golovchenko | Zendy; V. Narayanamurti | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Confinement-Enhanced Electron Transport across a Metal-Semiconductor Interface

Author(s) -

Igor Altfeder,

J. A. Golovchenko,

V. Narayanamurti

Publication year - 2001

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.87.056801

Subject(s) - scanning tunneling microscope , materials science , quantum dot , quantum tunnelling , electron , semiconductor , ballistic conduction , scanning electron microscope , nanoscopic scale , condensed matter physics , electron transport chain , epitaxy , wedge (geometry) , electron microscope , metal , nanotechnology , chemical physics , atomic physics , optoelectronics , physics , chemistry , optics , composite material , biochemistry , layer (electronics) , quantum mechanics , metallurgy

We present a combined scanning tunneling microscopy and ballistic electron emission microscopy study of electron transport across an epitaxial Pb/Si(111) interface. Experiments with a self-assembled Pb nanoscale wedge reveal the phenomenon of confinement-enhanced interfacial transport: a proportional increase of the electron injection rate into the semiconductor with the frequency of electron oscillations in the Pb quantum well.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research