Fluorescence Intermittency in Self-Assembled InP Quantum Dots | Zendy

Mitsuru Sugisaki | Zendy; Hongwen Ren | Zendy; Kenichi Nishi | Zendy; Yasuaki Masumoto | Zendy

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Fluorescence Intermittency in Self-Assembled InP Quantum Dots

Author(s) -

Mitsuru Sugisaki,

Hongwen Ren,

Kenichi Nishi,

Yasuaki Masumoto

Publication year - 2001

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.86.4883

Subject(s) - intermittency , quantum dot , fluorescence , electric field , materials science , spectroscopy , optoelectronics , field (mathematics) , molecular physics , optics , physics , mathematics , quantum mechanics , pure mathematics , turbulence , thermodynamics

Fluorescence intermittency in InP self-assembled dots is investigated by means of far field imaging and single dot spectroscopy. Based on our observation that blinking dots are found in the vicinity of scratches and the blinking frequency is drastically enhanced under a near-infrared laser irradiation, we attribute the origin of the fluorescence intermittency to a local electric field due to a carrier trapped at a deep localized center in the Ga0.5In0.5P matrix. The validity of this explanation is confirmed by a thermal activation-type behavior of the switching rate and artificial reproduction of the blinking phenomenon by an external electric field.

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