Kinetically Assisted Potential Sputtering of Insulators by Highly Charged Ions
Author(s) -
G. Hayderer,
S. Cernusca,
Michael Schmid,
П. Варга,
HP. Winter,
F. Aumayr,
D. Niemann,
Volker Hoffmann,
N. Stolterfoht,
C. Lemell,
Ludger Wirtz,
Joachim Burgdörfer
Publication year - 2001
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.86.3530
Subject(s) - sputtering , ion , materials science , halide , cascade , collision cascade , atomic physics , alkali metal , excitation , chemical physics , nanotechnology , thin film , physics , inorganic chemistry , chemistry , chromatography , quantum mechanics
A new form of potential sputtering has been found for impact of slow ( < or = 1500 eV) multiply charged Xe ions (charge states up to q = 25) on MgO(x). In contrast to alkali-halide or SiO2 surfaces this mechanism requires the simultaneous presence of electronic excitation of the target material and of a kinetically formed collision cascade within the target in order to initiate the sputtering process. This kinetically assisted potential sputtering mechanism has been identified to be present for other insulating surfaces as well.
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