Atomically Resolved Local Variation of the Barrier Height of the Flip-Flop Motion of Single Buckled Dimers of Si(100) | Zendy

Kenji Hata | Zendy; Yasuyuki Sainoo | Zendy; Hidemi Shigekawa | Zendy

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Atomically Resolved Local Variation of the Barrier Height of the Flip-Flop Motion of Single Buckled Dimers of Si(100)

Author(s) -

Kenji Hata,

Yasuyuki Sainoo,

Hidemi Shigekawa

Publication year - 2001

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.86.3084

Subject(s) - scanning tunneling microscope , flip flop , quantum tunnelling , dimer , activation energy , materials science , energy (signal processing) , trace (psycholinguistics) , molecular physics , physics , condensed matter physics , atomic physics , nanotechnology , chemistry , optoelectronics , nuclear magnetic resonance , quantum mechanics , philosophy , cmos , linguistics

The dynamics of the flip-flop motion of single buckled dimers of Si(100) was elucidated by locating the tip of a scanning tunneling microscope over a single flip-flopping dimer and measuring the tunneling current (time trace). Based on a statistical analysis of the time trace, we succeeded in estimating the activation energy and the energy splitting between the two stable configurations of buckling. Strong dependence of the dynamics of the flip-flop motion on the local environment was found: Activation energy differs significantly (directly measured 32 meV, estimated approximately 110 meV) for dimers in different domains.

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