Diffusional Kinetics of SiGe Dimers on Si(100) Using Atom-Tracking Scanning Tunneling Microscopy | Zendy

X. R. Qin | Zendy; B. S. Swartzentruber | Zendy; M. G. Lagally | Zendy

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Diffusional Kinetics of SiGe Dimers on Si(100) Using Atom-Tracking Scanning Tunneling Microscopy

Author(s) -

X. R. Qin,

B. S. Swartzentruber,

M. G. Lagally

Publication year - 2000

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.85.3660

Subject(s) - scanning tunneling microscope , dimer , atom (system on chip) , materials science , kinetics , diffusion , silicon , substrate (aquarium) , adsorption , surface diffusion , crystallography , microscopy , molecular physics , chemical physics , chemistry , nanotechnology , optoelectronics , optics , nuclear magnetic resonance , physics , quantum mechanics , thermodynamics , embedded system , oceanography , geology , computer science

Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics-a 180 degrees rotation between two highly buckled configurations. At temperatures at which the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Reexchange can also occur when the diffusing Si-Si dimer revisits the original site of exchange.

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