Open AccessInverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots
Author(s) -
P. W. Fry,
I. E. Itskevich,
D. J. Mowbray,
M. S. Skolnick,
Jonathan J. Finley,
J. A. T. Barker,
Eoin P. O’Reilly,
L. R. Wilson,
I. A. Larkin,
P. A. Maksym,
M. Hopkinson,
M. Al-Khafaji,
J. P. R. David,
A. G. Cullis,
G. Hill,
Jenny Clark
Publication year - 2000
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.84.733
Subject(s) - quantum dot , excited state , physics , electron , condensed matter physics , quantization (signal processing) , electron hole , spectroscopy , electric field , electronic structure , atomic physics , materials science , quantum mechanics , computer science , computer vision
New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole is localized towards the top of the dot, above the electron, an alignment that is inverted relative to the predictions of all recent calculations. We are able to obtain new information on the structure and composition of buried quantum dots from modeling of the data. We also demonstrate that the excited state transitions arise from lateral quantization and that tuning through the inhomogeneous distribution of dot energies can be achieved by variation of electric field.
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