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Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers
Author(s) -
William Barvosa-Carter,
Allan S. Bracker,
J. C. Culbertson,
B. Z. Nosho,
B. V. Shanabrook,
L. J. Whitman,
Hanchul Kim,
Normand A. Modine,
Efthimios Kaxiras
Publication year - 2000
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.84.4649
Subject(s) - nucleation , molecular beam epitaxy , materials science , chemical physics , diffraction , crystallography , layer (electronics) , surface reconstruction , range (aeronautics) , epitaxy , antimony , atmospheric temperature range , surface (topology) , condensed matter physics , molecular physics , nanotechnology , optics , chemistry , thermodynamics , physics , geometry , composite material , metallurgy , mathematics
We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1x3), we find that there are actually three distinct, stable (4x3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth.

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