Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages | Zendy

X. R. Qin | Zendy; B. S. Swartzentruber | Zendy; M. G. Lagally | Zendy

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Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages

Author(s) -

X. R. Qin,

B. S. Swartzentruber,

M. G. Lagally

Publication year - 2000

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.84.4645

Subject(s) - scanning tunneling microscope , atomic units , materials science , germanium , scanning tunneling spectroscopy , quantum tunnelling , silicon , atomic physics , nanotechnology , optoelectronics , physics , quantum mechanics

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions.

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