Lattice Location and Stability of Ion Implanted Cu in Si | Zendy

U. Wahl | Zendy; A. Vantomme | Zendy; G. Langouche | Zendy; J. G. Correia | Zendy; ISOLDE Collaboration | Zendy

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Lattice Location and Stability of Ion Implanted Cu in Si

Author(s) -

U. Wahl,

A. Vantomme,

G. Langouche,

J. G. Correia,

ISOLDE Collaboration

Publication year - 2000

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.84.1495

Subject(s) - materials science , ion , annealing (glass) , ion implantation , atomic physics , lattice (music) , dissociation (chemistry) , copper , silicon , molecular physics , physics , chemistry , optoelectronics , quantum mechanics , acoustics , metallurgy , composite material

We report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of beta(-) particles emitted by the radioactive isotope 67Cu was monitored following room temperature implantation into Si single crystals and annealing up to 600 degrees C. The majority of Cu was found close to substitutional sites, however, with a significant displacement, most likely 0.50(8) A along the <111> directions towards the bond center position. The activation energy for the dissociation of near-substitutional Cu is estimated to be 1.8-2.2 eV.

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