Threshold for Potential Sputtering of LiF | Zendy

G. Hayderer | Zendy; Michael Schmid | Zendy; П. Варга | Zendy; H. Winter | Zendy; F. Aumayr | Zendy; Ludger Wirtz | Zendy; C. Lemell | Zendy; Joachim Burgdörfer | Zendy; L. Hägg | Zendy; C. O. Reinhold | Zendy

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Threshold for Potential Sputtering of LiF

Author(s) -

G. Hayderer,

Michael Schmid,

П. Варга,

H. Winter,

F. Aumayr,

Ludger Wirtz,

C. Lemell,

Joachim Burgdörfer,

L. Hägg,

C. O. Reinhold

Publication year - 1999

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.83.3948

Subject(s) - sputtering , atomic physics , projectile , halide , ion , materials science , yield (engineering) , valence band , alkali metal , heavy ion , physics , band gap , chemistry , optoelectronics , nanotechnology , thin film , inorganic chemistry , quantum mechanics , metallurgy

We have measured total sputtering yields for impact of slow (#100 eV) singly and doubly charged ions on LiF. The minimum potential energy necessary to induce potential sputtering (PS) from LiF was determined to be about 10 eV. This threshold coincides with the energy necessary to produce a cold hole in the valence band of LiF by resonant neutralization. This allows the first unambiguous identification of PS induced by cold holes. Further stepwise increase of the sputtering yield with higher projectile potential energies provides evidence for additional defect-mediated sputtering mechanisms operative in alkali halides.

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