a−bPlane Microwave Surface Impedance of a High-Quality Bi2S | Zendy

Shih-Fu Lee | Zendy; D. C. Morgan | Zendy; R. J. Ormeno | Zendy; D. M. Broun | Zendy; R. A. Doyle | Zendy; J.R. Waldram | Zendy; Kazunori Kadowaki | Zendy

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a−bPlane Microwave Surface Impedance of a High-Quality Bi2SAuthor(s) -

Shih-Fu Lee,

D. C. Morgan,

R. J. Ormeno,

D. M. Broun,

R. A. Doyle,

J.R. Waldram,

Kazunori Kadowaki

Publication year - 1996

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.77.735

Subject(s) - physics , crystallography , omega , london penetration depth , condensed matter physics , superconductivity , chemistry , quantum mechanics

The a-b plane microwave surface impedance of a high-quality Bi2Sr2CaCu2O8 single crystal (Tc≈93 K) has been measured at 14.4, 24.6, and 34.7 GHz. The surface resistance at low temperature is the lowest yet reported, is comparable with the best YBa2Cu3O7-δ data, and has a characteristic ω2 frequency dependence. The change in penetration depth, Δλab(T), has a strong linear term at low temperature which is consistent with a gap with line nodes on the Fermi surface. The real part of the microwave conductivity displays a broad peak at low temperature, similar to that observed in YBa2Cu3O7-δ

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