Dimer and String Formation during Low Temperature Silicon Deposition on Si(100)
Author(s) -
A. P. Smith,
Hannes Jónsson
Publication year - 1996
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.77.1326
Subject(s) - dimer , scanning tunneling microscope , silicon , substrate (aquarium) , diffusion , materials science , deposition (geology) , quantum tunnelling , chemical physics , density functional theory , molecular physics , kinetic monte carlo , condensed matter physics , monte carlo method , nanotechnology , physics , chemistry , computational chemistry , thermodynamics , optoelectronics , nuclear magnetic resonance , paleontology , oceanography , statistics , mathematics , sediment , geology , biology
We present theoretical results based on density functional theory and kinetic Monte Carlo simulations of silicon deposition and address observations made in recently reported low temperature scanning tunneling microscopy studies. A mechanism is presented which explains dimer formation on top of the substrate’s dimer rows at 160 K and up to room temperature, while between-row dimers and longer strings of adatoms (“diluted dimer rows”) form at higher temperature. A crossover occurs at around room temperature between two different mechanisms for adatom diffusion in our model. [S0031-9007(96)00849-6]
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