Apparent Barrier Height in Scanning Tunneling Microscopy Revisited | Zendy

Laurits Højgaard Olesen | Zendy; Mads Brandbyge | Zendy; Mads R. Sørensen | Zendy; Karsten W. Jacobsen | Zendy; Erik Lægsgaard | Zendy; I. Stensgaard | Zendy; Flemming Besenbacher | Zendy

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Apparent Barrier Height in Scanning Tunneling Microscopy Revisited

Author(s) -

Laurits Højgaard Olesen,

Mads Brandbyge,

Mads R. Sørensen,

Karsten W. Jacobsen,

Erik Lægsgaard,

I. Stensgaard,

Flemming Besenbacher

Publication year - 1996

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.76.1485

Subject(s) - scanning tunneling microscope , quantum tunnelling , condensed matter physics , conductance , materials science , relaxation (psychology) , scanning tunneling spectroscopy , logarithm , physics , psychology , social psychology , mathematical analysis , mathematics

The apparent barrier height fap, that is, the rate of change of the logarithm of the conductance with tip-sample separation in a scanning tunneling microscope (STM), has been measured for Ni, Pt, and Au single crystal surfaces. The results show that fap is constant until point contact is reached rather than decreasing at small tunneling gap distances, as previously reported. The findings for fap can be accounted for theoretically by including the relaxations of the tip-surface junction in an STM due to the strong adhesive forces at close proximity. These relaxation effects are shown also to be generally relevant under imaging conditions at metal surfaces. PACS numbers: 61.16.Ch

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