Tunneling Images of Gallium on a Silicon Surface: Reconstructions, Superlattices, and Incommensuration
Author(s) -
D. M. Chen,
J. A. Golovchenko,
P. Bedrossian,
Kell Mortensen
Publication year - 1988
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.61.2867
Subject(s) - superlattice , silicon , gallium , condensed matter physics , scanning tunneling microscope , materials science , quantum tunnelling , monolayer , reflection (computer programming) , electron diffraction , gallium antimonide , surface reconstruction , lattice (music) , diffraction , optics , surface (topology) , nanotechnology , physics , optoelectronics , geometry , mathematics , metallurgy , computer science , acoustics , programming language
Real-space images of an incommensurate superlattice on a monolayer-gallium-covered silicon (111) surface have been obtained with the tunneling microscope. Large, internally ordered supercells which in turn form a lattice with discrete boundaries are observed. A graphitelike silicon-gallium top layer is suggested that is weakly bonded to the lattice below and stabilized by a periodic array of misfit dislocations. This model unifies reflection high-energy electron diffraction, x-ray standing-wave, and tunneling observations.
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