Explosive crystallization starting from an amorphous-silicon surface region during long pulsed-laser irradiation | Zendy

Kouichi Murakami | Zendy; Osamu Eryu | Zendy; K. Takita | Zendy; Kohzoh Masuda | Zendy

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Explosive crystallization starting from an amorphous-silicon surface region during long pulsed-laser irradiation

Author(s) -

Kouichi Murakami,

Osamu Eryu,

K. Takita,

Kohzoh Masuda

Publication year - 1987

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.59.2203

Subject(s) - materials science , explosive material , crystallization , irradiation , laser , silicon , amorphous solid , polycrystalline silicon , crystallite , layer (electronics) , surface layer , amorphous silicon , composite material , optoelectronics , optics , crystalline silicon , chemical engineering , crystallography , metallurgy , chemistry , physics , organic chemistry , nuclear physics , engineering , thin film transistor

A newly developed method of backside time-resolved reflectivity measurement is useful for probing the interface between solid and transient liquid Si. Measurements indicate that explosive crystallization starts very near the Si surface from a highly undercooled liquid Si layer thinner than 3 nm for laser irradiation with long pulses ranging from 65 to 200 ns. During the laser irradiation, surface melt-in continues into fine-grained polycrystalline Si produced by explosive crystallization, followed by solidification of the surface-liquid layer

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