Location of atoms in the first monolayer of GaAs on Si
Author(s) -
J. R. Patel,
P. E. Freeland,
Mark S. Hybertsen,
D. C. Jacobson,
J. A. Golovchenko
Publication year - 1987
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.59.2180
Subject(s) - monolayer , silicon , materials science , plane (geometry) , position (finance) , atomic physics , condensed matter physics , molecular physics , physics , nanotechnology , optoelectronics , geometry , mathematics , finance , economics
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