Normal Displacements on a Reconstructed Silicon (111) Surface: An X-Ray-Standing-Wave Study
Author(s) -
J. R. Patel,
P. E. Freeland,
J. A. Golovchenko,
A. R. Kortan,
D. J. Chadi,
Guo -Xin Qian
Publication year - 1986
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.57.3077
Subject(s) - silicon , surface (topology) , stacking , crystal (programming language) , x ray , physics , atom (system on chip) , atomic physics , germanium , displacement (psychology) , materials science , surface reconstruction , relaxation (psychology) , energy (signal processing) , molecular physics , optics , geometry , nuclear magnetic resonance , optoelectronics , quantum mechanics , psychology , social psychology , mathematics , computer science , embedded system , psychotherapist , programming language
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