Open AccessPulsed-laser irradiated silicon studied by time-resolved x-ray absorption (90–300 eV)
Author(s) -
Kouichi Murakami,
Hans C. Gerritsen,
Hedser van Brug,
F. Bijkerk,
F.W. Saris,
M.J. van der Wiel
Publication year - 1986
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.56.655
Subject(s) - irradiation , materials science , absorption (acoustics) , amorphous solid , absorption spectroscopy , spectral line , silicon , atomic physics , absorption edge , x ray , laser , analytical chemistry (journal) , physics , optics , crystallography , nuclear physics , chemistry , optoelectronics , band gap , chromatography , astronomy , composite material
We report the first x-ray absorption spectra of pulsed-laser irradiated amorphous Si around the Si L edge, recorded with a time resolution of 18 hs. At irradiances above 0.17 J/cm2 significant differences are found with the spectrum of amorphous Si. The disappearance of the characteristic Si LII,III edge structure at 100 eV and the decrease in overall absorption are interpreted in terms of the metallic character of liquid Si and the formation of droplets, respectively
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