Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs | Zendy

D. E. Aspnes | Zendy; S. M. Kelso | Zendy; C. G. Olson | Zendy; D. W. Lynch | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Direct Determination of Sizes of Excitations from Optical Measurements on Ion-Implanted GaAs

Author(s) -

D. E. Aspnes,

S. M. Kelso,

C. G. Olson,

D. W. Lynch

Publication year - 1982

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.48.1863

Subject(s) - crystallite , valence (chemistry) , ion , exciton , materials science , atomic physics , core (optical fiber) , ion implantation , condensed matter physics , molecular physics , physics , quantum mechanics , metallurgy , composite material

Using a simple model that describes the decrease of the amplitudes of optical structures in ion-implanted crystals, projected areas of several valence and core excitons in GaAs are determined. The last remnant of crystal-related optical structure vanishes for crystallite areas less than (16 A)/sup 2/.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research