Formation of Isolated Zn Vacancies in ZnO Single Crystals by Absorption of Ultraviolet Radiation: A Combined Study Using Positron Annihilation, Photoluminescence, and Mass Spectroscopy | Zendy

Enamul Khan | Zendy; Marc H. Weber | Zendy; Matthew D. McCluskey | Zendy

Open Access

Formation of Isolated Zn Vacancies in ZnO Single Crystals by Absorption of Ultraviolet Radiation: A Combined Study Using Positron Annihilation, Photoluminescence, and Mass Spectroscopy

Author(s) -

Enamul Khan,

Marc H. Weber,

Matthew D. McCluskey

Publication year - 2013

Publication title -

physical review letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 3.688

H-Index - 673

eISSN - 1079-7114

pISSN - 0031-9007

DOI - 10.1103/physrevlett.111.017401

Subject(s) - photoluminescence , materials science , vacancy defect , positron annihilation spectroscopy , zinc , shallow donor , atomic physics , photoluminescence excitation , annihilation , spectroscopy , absorption spectroscopy , fluence , irradiation , positron annihilation , doping , positron , condensed matter physics , optoelectronics , electron , physics , optics , nuclear physics , quantum mechanics , metallurgy

Positron annihilation spectra reveal isolated zinc vacancy (V(Zn)) creation in single-crystal ZnO exposed to 193-nm radiation at 100 mJ/cm(2) fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the V(Zn) acceptor level at ~100 meV to the conduction band. The observed V(Zn) density profile and hyperthermal Zn(+) ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon-a novel photoelectronic process for controlled V(Zn) creation in ZnO.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research