z-logo
open-access-imgOpen Access
Electron-Mediated Ferromagnetic Behavior inCoO/ZnOMultilayers
Author(s) -
Hyunjun Lee,
C. Bordel,
Julie Karel,
David W. Cooke,
Michalis Charilaou,
F. Hellman
Publication year - 2013
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.110.087206
Subject(s) - condensed matter physics , ferromagnetism , antiferromagnetism , magnetization , materials science , electron , rkky interaction , hall effect , physics , magnetic field , quantum mechanics
CoO/Al-doped ZnO (AZO) multilayers exhibit ferromagnetism up to ~300 K. The magnetic behavior oscillates with odd vs even number of Co layers in the insulating antiferromagnetic CoO and (separately) with the thickness of the AZO layers and vanishes if AZO is replaced by intrinsic ZnO. Magnetization is due to uncompensated (111) ferromagnetic planes of insulating CoO for odd numbers of atomic planes per layer that are coupled together via RKKY exchange mediated by electron carriers in the nonmagnetic AZO layers. The period of the oscillation with AZO thickness qualitatively matches the Fermi wave vector calculated from the carrier concentration measured by ordinary Hall effect. Magnetic polarization of the AZO carriers is confirmed via an anomalous Hall effect that is proportional to the magnetization.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom