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Direct Observation of a Pressure-Induced Precursor Lattice in Silicon
Author(s) -
Guoyin Shen,
Daijo Ikuta,
Stanislav Sinogeikin,
Quan Li,
Yi Zhang,
Changfeng Chen
Publication year - 2012
Publication title -
physical review letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 3.688
H-Index - 673
eISSN - 1079-7114
pISSN - 0031-9007
DOI - 10.1103/physrevlett.109.205503
Subject(s) - lattice (music) , silicon , phase transition , condensed matter physics , chemical physics , materials science , crystal structure , atomic units , physics , chemistry , crystallography , quantum mechanics , acoustics , metallurgy
Detailed knowledge of atomic-scale structural change is essential for understanding the process and mechanism of phase transitions in solids. We present the direct experimental evidence of a precursor lattice in silicon at high pressures. The precursor lattice may appear to coexist dynamically with the host lattice over a large pressure range through rapid lattice fluctuations. The first-principles calculations are used to elucidate a dynamic lattice-fluctuation mechanism that accounts for the experimental observations. This precursor lattice-fluctuation mechanism for the phase transition goes beyond previously considered reconstructive or displacive processes and provides a novel picture of the underlying dynamics.

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